VISHAY SIDR610DP-T1-GE3

Type of transistor

N-MOSFET

Polarisation

unipolar

Drain-source voltage

200V

Drain current

39.6A

Pulsed drain current

80A

Gate-source voltage

±20V

Mounting

SMD

Kind of package

reel,

Kind of channel

enhanced

Gross weight

0.1 g

Power dissipation

125W

Gate charge

38nC

On-state resistance

33.4mΩ