Vishay SIHA155N60EF-GE3

安装类型

通孔

包装/外壳

TO-220-3 Full Pack

供应商器件包装

TO-220 Full Pack

Base Product Number

SIHA155

Channel Mode

Enhancement

Current - Continuous Drain (Id) @ 25℃

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Id - Continuous Drain Current

9 A

Maximum Operating Temperature

+ 150 C

厂商

Vishay Siliconix

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Package

Tube

Pd - Power Dissipation

33 W

Power Dissipation (Max)

33W (Tc)

Product Status

活跃

Qg - Gate Charge

25 nC

Rds On - Drain-Source Resistance

136 mOhms

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

600 V

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

5 V

操作温度

-55°C ~ 150°C (TJ)

系列

EF

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

89mOhm @ 3.7A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 250µA

输入电容(Ciss)(Max)@Vds

1465 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

38 nC @ 10 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

±20V

场效应管特性

-