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价格梯度
内地含税价
1
¥39.759936
10
¥37.509376
100
¥35.386202
500
¥33.383206
1000
¥31.493593
SIHB068N60EF-GE3详情
VISHAY SIHB068N60EF-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
600V
Drain current
26A
Pulsed drain current
115A
Case1
TO263
Case
D2PAK
Gate-source voltage
±30V
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Gross weight
2g
Certificates
RoHS compliant
Power dissipation
250W
Gate charge
77nC
On-state resistance
68mΩ
SIHB068N60EF-GE3拓展信息
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哦! 它是空的。