Vishay SIHB080N60E-GE3

安装类型

表面贴装

包装/外壳

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

供应商器件包装

D²PAK (TO-263)

Package

Tube

Current - Continuous Drain (Id) @ 25℃

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Vishay Siliconix

Power Dissipation (Max)

227W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

31 ns

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

227 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

4.6 S

Channel Mode

Enhancement

Manufacturer

Vishay

Brand

Vishay Semiconductors

Qg - Gate Charge

63 nC

Rds On - Drain-Source Resistance

80 mOhms

RoHS

Details

Typical Turn-Off Delay Time

37 ns

Id - Continuous Drain Current

35 A

操作温度

-55°C ~ 150°C (TJ)

系列

E

包装

Tube

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

80mOhm @ 17A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 250µA

输入电容(Ciss)(Max)@Vds

2557 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

63 nC @ 10 V

上升时间

96 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±30V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET