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价格梯度
内地含税价
1
¥72.474601
10
¥68.372263
100
¥64.502141
500
¥60.851071
1000
¥57.406671
SIHB24N65EFT1-GE3详情
VISHAY SIHB24N65EFT1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
650V
Drain current
24A
Pulsed drain current
65A
Case1
TO263
Case
D2PAK
Gate-source voltage
±30V
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Gross weight
1.5g
Certificates
RoHS compliant
Power dissipation
250W
Gate charge
122nC
On-state resistance
156mΩ
SIHB24N65EFT1-GE3拓展信息
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哦! 它是空的。