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价格梯度
内地含税价
1
¥42.993624
10
¥40.560024
100
¥38.264173
500
¥36.098275
1000
¥34.054976
SIHB28N60EF-GE3详情
VISHAY SIHB28N60EF-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
600V
Drain current
18A
Pulsed drain current
75A
Case1
TO263
Case
D2PAK
Gate-source voltage
±30V
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Gross weight
2g
Certificates
RoHS compliant
Power dissipation
250W
Gate charge
0.12µC
On-state resistance
123mΩ
SIHB28N60EF-GE3拓展信息
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哦! 它是空的。