SIHB4N80E-GE3详情
VISHAY SIHB4N80E-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
800V
Drain current
2.7A
Pulsed drain current
11A
Case1
TO263
Case
D2PAK
Gate-source voltage
±30V
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Gross weight
2g
Certificates
RoHS compliant
Power dissipation
69W
Gate charge
32nC
On-state resistance
1.27Ω
SIHB4N80E-GE3拓展信息
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哦! 它是空的。