Vishay SIHD7N60ET1-GE3

包装/外壳

TO-252-3

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

13 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

78 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.011640 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Vishay

Brand

Vishay Semiconductors

Qg - Gate Charge

20 nC

Rds On - Drain-Source Resistance

600 mOhms

RoHS

Details

Typical Turn-Off Delay Time

24 ns

Id - Continuous Drain Current

7 A

系列

E

包装

MouseReel

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

13 ns

产品类别

MOSFET

产品类别

MOSFET