Vishay SIHF30N60E-E3

包装/外壳

TO-220FP-3

Manufacturer Part Number

SIHF30N60E-E3

Manufacturer

Vishay

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

19 ns

Vgs th - Gate-Source Threshold Voltage

2.8 V

Pd - Power Dissipation

37 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Channel Mode

Enhancement

Brand

Vishay / Siliconix

Qg - Gate Charge

85 nC

Rds On - Drain-Source Resistance

125 mOhms

RoHS

Details

Typical Turn-Off Delay Time

63 ns

Id - Continuous Drain Current

29 A

系列

E

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

32 ns

产品类别

MOSFET

产品类别

MOSFET

宽度

4.7 mm

高度

15.49 mm

长度

10.41 mm