SIHFBE30L-GE3详情
VISHAY SIHFBE30L-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
800V
Drain current
2.6A
Pulsed drain current
16A
Case1
TO262
Case
I2PAK
Gate-source voltage
±20V
Mounting
THT
Kind of package
tube
Kind of channel
enhanced
Gross weight
2g
Certificates
RoHS compliant
Power dissipation
125W
Gate charge
78nC
On-state resistance
3Ω
SIHFBE30L-GE3拓展信息
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哦! 它是空的。