SIHG33N65E-GE3详情
VISHAY SIHG33N65E-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
650V
Drain current
21A
Pulsed drain current
101A
Case
TO247AC
Gate-source voltage
±30V
Mounting
THT
Kind of package
tube
Kind of channel
enhanced
Gross weight
5g
Certificates
RoHS compliant
Power dissipation
313W
Gate charge
173nC
On-state resistance
0.105Ω
SIHG33N65E-GE3拓展信息
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哦! 它是空的。