SIHG80N60E-GE3详情
VISHAY SIHG80N60E-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
600V
Drain current
51A
Pulsed drain current
268A
Case
TO247AC
Gate-source voltage
±30V
Mounting
THT
Kind of package
tube
Kind of channel
enhanced
Gross weight
5g
Certificates
RoHS compliant
Power dissipation
520W
Gate charge
443nC
On-state resistance
30mΩ
SIHG80N60E-GE3拓展信息
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哦! 它是空的。