SIHH14N65EF-T1-GE3详情
VISHAY SIHH14N65EF-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
650V
Drain current
9.5A
Pulsed drain current
36A
Case
PowerPAK® 8x8L
Gate-source voltage
±30V
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Gross weight
1g
Certificates
RoHS compliant
Power dissipation
156W
Gate charge
98nC
On-state resistance
271mΩ
SIHH14N65EF-T1-GE3拓展信息
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哦! 它是空的。