Vishay SIHK155N60E-T1-GE3

安装类型

表面贴装

包装/外壳

8-PowerBSFN

供应商器件包装

PowerPAK®10 x 12

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

SIHK155

Current - Continuous Drain (Id) @ 25℃

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Vishay Siliconix

Power Dissipation (Max)

156W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

5V @ 250µA

Vds - Drain-Source Breakdown Voltage

600 V

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

156 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

24 nC

Rds On - Drain-Source Resistance

135 mOhms

Id - Continuous Drain Current

19 A

操作温度

-55°C ~ 150°C (TJ)

系列

E

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

155mOhm @ 10A, 10V

输入电容(Ciss)(Max)@Vds

1514 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

36 nC @ 10 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

±30V

场效应管特性

-