SIHP050N60E-GE3详情
VISHAY SIHP050N60E-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Case
TO220AB
Gate-source voltage
±30V
Mounting
THT
Kind of package
tube
Kind of channel
enhanced
Gross weight
2g
Certificates
RoHS compliant
Pulsed drain current
155A
Drain current
32A
Drain-source voltage
600V
Polarisation
unipolar
Type of transistor
N-MOSFET
Power dissipation
278W
Gate charge
130nC
On-state resistance
50mΩ
SIHP050N60E-GE3拓展信息
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哦! 它是空的。