SIHP28N65E-GE3详情
VISHAY SIHP28N65E-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Certificates
RoHS compliant
Gross weight
2g
Kind of channel
enhanced
Kind of package
tube
Mounting
THT
Gate-source voltage
±30V
Case
TO220AB
Pulsed drain current
87A
Drain current
18A
Drain-source voltage
650V
Polarisation
unipolar
Type of transistor
N-MOSFET
Power dissipation
250W
Gate charge
0.14µC
On-state resistance
112mΩ
SIHP28N65E-GE3拓展信息
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哦! 它是空的。