SIHP33N60EF-GE3详情
VISHAY SIHP33N60EF-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Certificates
RoHS compliant
Gross weight
2g
Kind of channel
enhanced
Kind of package
tube
Mounting
THT
Gate-source voltage
±30V
Case
TO220AB
Pulsed drain current
100A
Drain current
21A
Drain-source voltage
600V
Polarisation
unipolar
Power dissipation
278W
Gate charge
155nC
On-state resistance
98mΩ
SIHP33N60EF-GE3拓展信息
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哦! 它是空的。