SIJH800E-T1-GE3详情
VISHAY SIJH800E-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
80V
Drain current
299A
Pulsed drain current
350A
Case
PowerPAK® 8x8L
Gate-source voltage
±20V
Mounting
SMD
Kind of package
reel,
Kind of channel
enhanced
Gross weight
0.1 g
Power dissipation
333W
Gate charge
0.21µC
On-state resistance
1.8mΩ
SIJH800E-T1-GE3拓展信息
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哦! 它是空的。