Vishay SIJK5100E-T1-GE3

包装/外壳

PowerPAK-16

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

100 V

Id - Continuous Drain Current

417 A

Rds On - Drain-Source Resistance

1.4 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

4 V

Qg - Gate Charge

131 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

536 W

Channel Mode

Enhancement

Tradename

TrenchFET

Fall Time

35 ns

Forward Transconductance - Min

245 S

Factory Pack Quantity

1800

Typical Turn-Off Delay Time

54 ns

Typical Turn-On Delay Time

41 ns

包装

Reel

系列

SIJK5100E

配置

Single

通道数量

1 Channel

上升时间

18 ns

晶体管类型

1 N-Channel