Vishay SIR5110DP-T1-RE3

包装/外壳

PowerPAK® SO-8

安装类型

表面贴装

供应商器件包装

PowerPAK® SO-8

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250µA

Product Status

活跃

Power Dissipation (Max)

4.8W (Ta), 59.5W (Tc)

厂商

Vishay Siliconix

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

Current - Continuous Drain (Id) @ 25℃

13.5A (Ta), 47.6A (Tc)

Base Product Number

SIR5110

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

59.5 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

12.8 nC

Rds On - Drain-Source Resistance

12.5 mOhms

Id - Continuous Drain Current

47.6 A

系列

TrenchFET®

操作温度

-55°C ~ 150°C (TJ)

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

6mOhm @ 35A, 10V

输入电容(Ciss)(Max)@Vds

920 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

20 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

场效应管特性

-