Vishay SIR5808DP-T1-RE3

底架

表面贴装

安装类型

表面贴装

包装/外壳

PowerPAK® SO-8

供应商器件包装

PowerPAK® SO-8

Voltage Rating (DC)

10 V

RoHS

Non-Compliant

Voltage, Rating

10 V

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

SIR5808

Current - Continuous Drain (Id) @ 25℃

18.8A (Ta), 66.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

厂商

Vishay Siliconix

Power Dissipation (Max)

5.2W (Ta), 65.7W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250µA

Vds - Drain-Source Breakdown Voltage

80 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

65.7 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

11.8 nC

Rds On - Drain-Source Resistance

7.35 mOhms

Id - Continuous Drain Current

66.8 A

包装

Tape & Reel (TR)

操作温度

-55°C ~ 150°C (TJ)

系列

TrenchFET®

最高工作温度

125 °C

最小工作温度

-55 °C

电容量

300 fF

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

157mOhm @ 10A, 10V

输入电容(Ciss)(Max)@Vds

1210 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

24 nC @ 10 V

漏源电压 (Vdss)

80 V

Vgs（最大值）

±30V

场效应管特性

-

座位高度(最大)

279.4 µm

宽度

330.2 µm

高度

225 µm

长度

609.6 µm

无铅

含铅