SIR606DP-T1-GE3详情
VISHAY SIR606DP-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
100V
Drain current
37A
Pulsed drain current
100A
Case
PowerPAK® SO8
Gate-source voltage
±20V
Mounting
SMD
Kind of package
reel,
Kind of channel
enhanced
Gross weight
0.1 g
Power dissipation
44.5W
Gate charge
36.5nC
On-state resistance
20mΩ
SIR606DP-T1-GE3拓展信息
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哦! 它是空的。