SIRA50DP-T1-RE3详情
VISHAY SIRA50DP-T1-RE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
40V
Drain current
100A
Pulsed drain current
400A
Case
PowerPAK® SO8
Gate-source voltage
-16...20V
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Gross weight
1g
Certificates
RoHS compliant
Power dissipation
64W
Gate charge
194nC
On-state resistance
1.45mΩ
SIRA50DP-T1-RE3拓展信息
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哦! 它是空的。