Vishay SIRA54ADP-T1-RE3

包装/外壳

PowerPAK® SO-8

安装类型

表面贴装

供应商器件包装

PowerPAK® SO-8

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

SIRA54

Current - Continuous Drain (Id) @ 25℃

36.2A (Ta), 128A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Vishay Siliconix

Power Dissipation (Max)

5.2W (Ta), 65.7W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250µA

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

30 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

5.2 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 16 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

98 S

Channel Mode

Enhancement

Manufacturer

Vishay

Brand

Vishay Semiconductors

Qg - Gate Charge

70 nC

Rds On - Drain-Source Resistance

2.2 mOhms

RoHS

Details

Typical Turn-Off Delay Time

60 ns

Id - Continuous Drain Current

36.2 A

操作温度

-55°C ~ 150°C (TJ)

系列

TrenchFET®

包装

MouseReel

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

2.2mOhm @ 15A, 10V

输入电容(Ciss)(Max)@Vds

3850 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

70 nC @ 10 V

上升时间

12 ns

漏源电压 (Vdss)

40 V

Vgs（最大值）

+20V, -16V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET