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价格梯度
内地含税价
1
¥15.556883
10
¥14.676304
100
¥13.845572
500
¥13.061858
1000
¥12.322512
SIS888DN-T1-GE3详情
VISHAY SIS888DN-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Certificates
RoHS compliant
Gross weight
1g
Kind of channel
enhanced
Kind of package
reel
Kind of package1
tape
Mounting
SMD
Gate-source voltage
±20V
Case
PowerPAK® 1212-8
Pulsed drain current
50A
Drain current
16A
Drain-source voltage
150V
Polarisation
unipolar
Type of transistor
N-MOSFET
Power dissipation
33W
Gate charge
14.5nC
On-state resistance
85mΩ
SIS888DN-T1-GE3拓展信息
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哦! 它是空的。