Vishay SISH103DN-T1-GE3

包装/外壳

PowerPAK® 1212-8SH

安装类型

表面贴装

供应商器件包装

PowerPAK® 1212-8SH

Product Status

活跃

Power Dissipation (Max)

3.67W (Ta), 41.6W (Tc)

厂商

Vishay Siliconix

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Current - Continuous Drain (Id) @ 25℃

16A (Ta), 54A (Tc)

Base Product Number

SISH103

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

41.6 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

48 nC

Rds On - Drain-Source Resistance

8.9 mOhms

Id - Continuous Drain Current

54 A

系列

TrenchFET®

操作温度

-55°C ~ 150°C (TJ)

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

155mOhm @ 10A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 250µA

输入电容(Ciss)(Max)@Vds

2540 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

72 nC @ 10 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±30V

场效应管特性

-