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价格梯度
内地含税价
1
¥15.211818
10
¥14.350772
100
¥13.53846
500
¥12.772133
1000
¥12.049182
SISH106DN-T1-GE3详情
VISHAY SISH106DN-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
20V
Drain current
15.6A
Pulsed drain current
60A
Case
PowerPAK® 1212-8
Gate-source voltage
±12V
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Gross weight
1g
Certificates
RoHS compliant
Power dissipation
2W
Gate charge
27nC
On-state resistance
9.8mΩ
SISH106DN-T1-GE3拓展信息
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哦! 它是空的。