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价格梯度
内地含税价
1
¥16.473704
10
¥15.541229
100
¥14.661541
500
¥13.831637
1000
¥13.048718
SISH116DN-T1-GE3详情
VISHAY SISH116DN-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
40V
Drain current
13.1A
Pulsed drain current
60A
Case
PowerPAK® 1212-8
Gate-source voltage
±20V
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Gross weight
1g
Certificates
RoHS compliant
Power dissipation
2W
Gate charge
23nC
On-state resistance
10mΩ
SISH116DN-T1-GE3拓展信息
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哦! 它是空的。