Vishay SISHA18ADN-T1-GE3

安装类型

表面贴装

包装/外壳

PowerPAK® 1212-8SH

供应商器件包装

PowerPAK® 1212-8SH

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

22A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Vishay Siliconix

Power Dissipation (Max)

3.5W (Ta), 26.5W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

8 ns

Vgs th - Gate-Source Threshold Voltage

1 V, 2.5 V

Pd - Power Dissipation

26.5 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 16 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

48 S

Manufacturer

Vishay

Brand

Vishay Semiconductors

Qg - Gate Charge

9.8 nC

Rds On - Drain-Source Resistance

4.6 mOhms, 7 mOhms

RoHS

Details

Typical Turn-Off Delay Time

20 ns

Id - Continuous Drain Current

22 A

操作温度

-55°C ~ 150°C (TJ)

系列

TrenchFET®

包装

MouseReel

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.6mOhm @ 10A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 250µA

输入电容(Ciss)(Max)@Vds

1650 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

33 nC @ 10 V

上升时间

5 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

+20V, -16V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET