Vishay SISS5110DN-T1-GE3

安装类型

表面贴装

包装/外壳

PowerPAK® 1212-8S

供应商器件包装

PowerPAK® 1212-8S

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

SISS5110

Current - Continuous Drain (Id) @ 25℃

13.4A (Ta), 46.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

厂商

Vishay Siliconix

Power Dissipation (Max)

4.8W (Ta), 56.8W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

56.8 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

20 V, - 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

12.8 nC

Rds On - Drain-Source Resistance

12.6 mOhms

Id - Continuous Drain Current

46.3 A

操作温度

-55°C ~ 150°C (TJ)

系列

TrenchFET®

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

8.9mOhm @ 10A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 250µA

输入电容(Ciss)(Max)@Vds

920 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

20 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±25V

场效应管特性

-