Vishay SISS5112DN-T1-GE3

包装/外壳

PowerPak-8

Channel Mode

Enhancement

Id - Continuous Drain Current

40.7 A

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Pd - Power Dissipation

52 W

Qg - Gate Charge

10.6 nC

Rds On - Drain-Source Resistance

14.9 mOhms

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

100 V

Vgs - Gate-Source Voltage

20 V

Vgs th - Gate-Source Threshold Voltage

4 V

技术

Si

通道数量

1 Channel