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价格梯度
内地含税价
1
¥12.927443
10
¥12.195704
100
¥11.505376
500
¥10.854129
1000
¥10.239747
SISS61DN-T1-GE3详情
VISHAY SISS61DN-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
P-MOSFET
Polarisation
unipolar
Drain-source voltage
-20V
Drain current
-89.6A
Pulsed drain current
-200A
Case
PowerPAK® 1212-8
Gate-source voltage
±8V
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Gross weight
0.099g
Certificates
RoHS compliant
Power dissipation
42.1W
Gate charge
231nC
On-state resistance
9.8mΩ
SISS61DN-T1-GE3拓展信息
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哦! 它是空的。