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价格梯度
内地含税价
1
¥9.220947
10
¥8.699006
100
¥8.206608
500
¥7.742081
1000
¥7.303857
SISS65DN-T1-GE3详情
VISHAY SISS65DN-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
P-MOSFET
Polarisation
unipolar
Drain-source voltage
-30V
Drain current
75.2A
Pulsed drain current
-120A
Case
PowerPAK® 1212-8
Gate-source voltage
±20V
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Gross weight
1g
Certificates
RoHS compliant
Power dissipation
42.1W
Gate charge
138nC
On-state resistance
7.5mΩ
SISS65DN-T1-GE3拓展信息
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哦! 它是空的。