VISHAY SISS92DN-T1-GE3

Type of transistor

N-MOSFET

Technology1

TrenchFET®

Polarisation

unipolar

Drain-source voltage

250V

Drain current

9.9A

Pulsed drain current

20A

Case

PowerPAK® 1212-8

Gate-source voltage

±20V

Mounting

SMD

Kind of package1

tape

Kind of package

reel

Kind of channel

enhanced

Gross weight

1g

Certificates

RoHS compliant

Power dissipation

42.1W

Gate charge

16nC

On-state resistance

0.19Ω