SISS94DN-T1-GE3详情
VISHAY SISS94DN-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Certificates
RoHS compliant
Gross weight
1g
Kind of channel
enhanced
Kind of package
reel
Kind of package1
tape
Mounting
SMD
Gate-source voltage
±20V
Case
PowerPAK® 1212-8
Pulsed drain current
25A
Drain current
15.6A
Drain-source voltage
200V
Polarisation
unipolar
Technology1
TrenchFET®
Type of transistor
N-MOSFET
Power dissipation
42.1W
Gate charge
21nC
On-state resistance
78mΩ
SISS94DN-T1-GE3拓展信息
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哦! 它是空的。