Vishay SIZ998BDT-T1-GE3

安装类型

表面贴装

包装/外壳

8-PowerWDFN

供应商器件包装

8-PowerPair® (6x5)

MSL

MSL 1 - Unlimited

Qualification

-

Transistor Polarity

N Channel + Schottky

Continuous Drain Current Id

94.6A

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

2.2 V

Pd - Power Dissipation

20 W, 32.9 W

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 16 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Vishay

Brand

Vishay / Siliconix

Qg - Gate Charge

12 nC, 31.1 nC

Tradename

TrenchFET

Rds On - Drain-Source Resistance

33.8 mOhms, 43.9 mOhms

RoHS

Details

Id - Continuous Drain Current

54.8 A, 94.6 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

SIZ998

Current - Continuous Drain (Id) @ 25℃

23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)

厂商

Vishay Siliconix

Product Status

活跃

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

系列

TrenchFET® Gen IV

子类别

MOSFETs

技术

Si

通道数量

2 Channel

功率 - 最大

3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)

场效应管类型

2 N-Channel (Dual), Schottky

Rds On(Max)@Id,Vgs

4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V

不同 Id 时 Vgs(th)（最大值）

2.2V @ 250µA

输入电容(Ciss)(Max)@Vds

790pF @ 15V, 2130pF @ 15V

门极电荷(Qg)(最大)@Vgs

18nC @ 10V, 46.7nC @ 10V

漏源电压 (Vdss)

30V

产品类别

MOSFET

信道型

Dual N

场效应管特性

Standard

产品类别

MOSFET