SMB10J12AHE3/52详情
VISHAY SMB10J12AHE3/52重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of diode
TVS
Peak pulse power dissipation
1kW
Max. off-state voltage
12V
Breakdown Voltage / V
13.3V
Max. forward impulse current
50.3A
Semiconductor structure
unidirectional
Case
SMB
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Certificates
RoHS compliant
Gross weight
0.095g
Manufacturer series
SMBJ
Features of semiconductor devices
glass passivated
Leakage current
5µA
SMB10J12AHE3/52拓展信息
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division








哦! 它是空的。