Vishay SQ2361ES-T1_BE3

包装/外壳

SOT-23-3

安装类型

表面贴装

供应商器件包装

SOT-23-3 (TO-236)

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

8 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

2 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 175 C

Id - Continuous Drain Current

2.8 A

Typical Turn-Off Delay Time

22 ns

RoHS

Details

Rds On - Drain-Source Resistance

177 mOhms

Tradename

TrenchFET

Qg - Gate Charge

9 nC

Brand

Vishay / Siliconix

Manufacturer

Vishay

Part # Aliases

SQ2361ES-T1_GE3

Channel Mode

Enhancement

Mounting Styles

SMD/SMT

Factory Pack QuantityFactory Pack Quantity

3000

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

SQ2361

Current - Continuous Drain (Id) @ 25℃

2.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Vishay Siliconix

Power Dissipation (Max)

2W (Tc)

Product Status

活跃

系列

SQ

包装

MouseReel

操作温度

-55°C ~ 175°C (TJ)

子类别

MOSFETs

技术

Si

通道数量

1 Channel

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

177mOhm @ 2.4A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 250µA

输入电容(Ciss)(Max)@Vds

550 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

12 nC @ 10 V

上升时间

9 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 P-Channel

场效应管特性

-

产品类别

MOSFET