SQ2364EES-T1_GE3详情
VISHAY SQ2364EES-T1_GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
60V
Drain current
1.3A
Case
SOT23
Gate-source voltage
±8V
Mounting
SMD
Kind of package1
tape
Kind of package
reel
Kind of channel
enhanced
Version
ESD
Gross weight
0.025g
Certificates
RoHS compliant
Power dissipation
1W
Gate charge
2nC
On-state resistance
245mΩ
SQ2364EES-T1_GE3拓展信息
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哦! 它是空的。