Vishay SQ3426CEV-T1_GE3

安装类型

表面贴装

包装/外壳

SOT-23-6 Thin, TSOT-23-6

供应商器件包装

6-TSOP

Dimensions

26,8 x 29,9 x 3,9mm

RoHS

有

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Vishay Siliconix

Power Dissipation (Max)

5W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

9 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

5 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

21 S

Channel Mode

Enhancement

Manufacturer

Vishay

Brand

Vishay Semiconductors

Qg - Gate Charge

11.5 nC

Rds On - Drain-Source Resistance

42 mOhms

Typical Turn-Off Delay Time

19 ns

Id - Continuous Drain Current

7 A

操作温度

0...+70°C

系列

SH250-300B

包装

MouseReel

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

注意

100k P/E cycles

通道数量

1 Channel

界面

SATA 3.1

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

42mOhm @ 5A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 250µA

输入电容(Ciss)(Max)@Vds

1300 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

12 nC @ 4.5 V

上升时间

3 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

外形尺寸

mSATA (MO-300B)

特征

Temp. Sensor, AES, DEVSLP

产品类别

MOSFET