SQ4917CEY-T1_GE3详情
Vishay SQ4917CEY-T1_GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-SOIC (0.154, 3.90mm Width)
供应商器件包装
8-SOIC
Package
Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Base Product Number
SQ4917
Current - Continuous Drain (Id) @ 25℃
8A (Tc)
厂商
Vishay Siliconix
Product Status
活跃
Vds - Drain-Source Breakdown Voltage
60 V
Typical Turn-On Delay Time
11 ns
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
5 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
2500
Id - Continuous Drain Current
8 A
Typical Turn-Off Delay Time
32 ns
RoHS
Details
Rds On - Drain-Source Resistance
48 mOhms
Qg - Gate Charge
36.3 nC
Brand
Vishay Semiconductors
Manufacturer
Vishay
Channel Mode
Enhancement
Forward Transconductance - Min
12 S
Mounting Styles
SMD/SMT
操作温度
-55°C ~ 175°C (TJ)
系列
Automotive, AEC-Q101, TrenchFET®
包装
MouseReel
子类别
MOSFETs
技术
MOSFET (Metal Oxide)
配置
2 P-Channel (Dual)
通道数量
2 Channel
功率 - 最大
5W (Tc)
Rds On(Max)@Id,Vgs
48mOhm @ 4.3A, 10V
不同 Id 时 Vgs(th)(最大值)
2.5V @ 250µA
输入电容(Ciss)(Max)@Vds
1910pF @ 30V
门极电荷(Qg)(最大)@Vgs
65nC @ 10V
上升时间
5 ns
漏源电压 (Vdss)
60V
产品类别
MOSFET
场效应管特性
-
产品类别
MOSFET
SQ4917CEY-T1_GE3拓展信息
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