SQA604CEJW-T1_GE3详情
Vishay SQA604CEJW-T1_GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
Surface Mount, Wettable Flank
包装/外壳
PowerPAK® SC-70-6
供应商器件包装
PowerPAK®SC-70W-6
Package
Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current - Continuous Drain (Id) @ 25℃
5.63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
厂商
Vishay Siliconix
Power Dissipation (Max)
13.6W (Tc)
Product Status
活跃
Vds - Drain-Source Breakdown Voltage
80 V
Typical Turn-On Delay Time
5 ns
Vgs th - Gate-Source Threshold Voltage
2 V
Pd - Power Dissipation
13.6 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Forward Transconductance - Min
10.2 ns
Manufacturer
Vishay
Brand
Vishay Semiconductors
Qg - Gate Charge
6.5 nC
Rds On - Drain-Source Resistance
80 mOhms, 95 mOhms
RoHS
Details
Typical Turn-Off Delay Time
14 ns
Id - Continuous Drain Current
5.63 A
操作温度
-55°C ~ 175°C (TJ)
系列
Automotive, AEC-Q101, TrenchFET®
包装
MouseReel
子类别
MOSFETs
技术
MOSFET (Metal Oxide)
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
80mOhm @ 3A, 10V
不同 Id 时 Vgs(th)(最大值)
2.5V @ 250µA
输入电容(Ciss)(Max)@Vds
445 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
9.8 nC @ 10 V
上升时间
3 ns
漏源电压 (Vdss)
80 V
Vgs(最大值)
±20V
产品类别
MOSFET
场效应管特性
-
产品类别
MOSFET
SQA604CEJW-T1_GE3拓展信息
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