Vishay SQJ110EP-T1_GE3

安装类型

表面贴装

包装/外壳

PowerPAK® SO-8

供应商器件包装

PowerPAK® SO-8

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

170A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Vishay Siliconix

Power Dissipation (Max)

500W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

16 ns

Vgs th - Gate-Source Threshold Voltage

2.7 V

Pd - Power Dissipation

500 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

130 ns

Manufacturer

Vishay

Brand

Vishay Semiconductors

Qg - Gate Charge

75 nC

Rds On - Drain-Source Resistance

6.3 mOhms

RoHS

Details

Typical Turn-Off Delay Time

36 ns

Id - Continuous Drain Current

170 A

操作温度

-55°C ~ 175°C (TJ)

系列

Automotive, AEC-Q101, TrenchFET®

包装

MouseReel

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

6.3mOhm @ 15A, 10V

不同 Id 时 Vgs(th)（最大值）

3.5V @ 250µA

输入电容(Ciss)(Max)@Vds

6100 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

113 nC @ 10 V

上升时间

5 ns

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET