Vishay SQS180ELNW-T1_GE3

安装类型

表面贴装

材料

Brass

RoHS

Non-Compliant

Number of Elements per Chip

1

Package Type

PowerPAK 1212-8

MSL

MSL 1 - Unlimited

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

113 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Vishay

Brand

Vishay Semiconductors

Qg - Gate Charge

47 nC

Rds On - Drain-Source Resistance

4.3 mOhms

Id - Continuous Drain Current

141 A

系列

SQ

包装

MouseReel

终端

IDC

子类别

MOSFETs

技术

Si

引脚数量

8

通道数量

1 Channel

镀层

Tin

产品类别

MOSFET

信道型

N

产品

MOSFET

产品类别

MOSFET