Vishay SUP90N06-05L-E3

包装/外壳

TO-220-3

RoHS

Non-Compliant

Turn Off Delay Time

110 ns

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

22 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

300 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Forward Transconductance - Min

30 S

Channel Mode

Enhancement

Manufacturer

Vishay

Brand

Vishay / Siliconix

Qg - Gate Charge

300 nC

Tradename

TrenchFET

Rds On - Drain-Source Resistance

3.9 mOhms

Typical Turn-Off Delay Time

110 ns

Id - Continuous Drain Current

90 A

系列

SUP

包装

Tube

电阻

4.9 mΩ

最高工作温度

175 °C

最小工作温度

-55 °C

子类别

MOSFETs

最大功率耗散

300 W

技术

Si

配置

Single

通道数量

1 Channel

元素配置

Single

功率耗散

300 W

上升时间

130 ns

漏源电压 (Vdss)

60 V

产品类别

MOSFET

晶体管类型

1 N-Channel

连续放电电流(ID)

90 A

栅极至源极电压(Vgs)

20 V

漏源击穿电压

60 V

漏源电阻

4.9 mΩ

产品类别

MOSFET