Vishay VQ2006P

表面安装

NO

终端数量

14

晶体管元件材料

SILICON

Turn-off Time-Max (toff)

30 ns

Turn-on Time-Max (ton)

15 ns

Manufacturer Part Number

VQ2006P

Part Life Cycle Code

Obsolete

Ihs Manufacturer

VISHAY SILICONIX

Package Description

IN-LINE, R-PDIP-T14

Risk Rank

5.84

Drain Current-Max (ID)

0.41 A

Number of Elements

4

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

IN-LINE

ECCN 代码

EAR99

HTS代码

8541.29.00.75

端子位置

DUAL

终端形式

THROUGH-HOLE

Reach合规守则

unknown

JESD-30代码

R-PDIP-T14

资历状况

不合格

配置

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

操作模式

增强型MOSFET

极性/通道类型

P-CHANNEL

漏极-源极导通最大电阻

5 Ω

脉冲漏极电流-最大值(IDM)

3 A

DS 击穿电压-最小值

90 V

场效应管技术

METAL-OXIDE SEMICONDUCTOR

反馈上限-最大值 (Crss)

25 pF