Vishay WFMB2010R0350DEA

包装/外壳

DPAK-3

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

54 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.011640 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Forward Transconductance - Min

31 S

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

26 nC

Tradename

PowerTrench

Rds On - Drain-Source Resistance

31 mOhms

RoHS

Details

Id - Continuous Drain Current

42 A

系列

FDD86102LZ

包装

MouseReel

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

6.22 mm

高度

2.39 mm

长度

6.73 mm