Vishay WSR211

包装/外壳

TO-247-3

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

63 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

240

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

IPW65R66CFDXK SP000861700 IPW65R660CFDFKSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

22 nC

Tradename

CoolMOS

Rds On - Drain-Source Resistance

660 mOhms

RoHS

Details

Id - Continuous Drain Current

6 A

系列

CoolMOS CFD2

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

8 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

5.21 mm

高度

21.1 mm

长度

16.13 mm