Vishay Y118917K6160TR1R

包装/外壳

TO-3PN

Maximum Gate Emitter Voltage

- 20 V, + 20 V

Pd - Power Dissipation

268 W

Maximum Operating Temperature

+ 175 C

Collector-Emitter Saturation Voltage

1.6 V

Unit Weight

0.225789 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Continuous Collector Current at 25 C

80 A

Mounting Styles

通孔

Manufacturer

onsemi

Brand

onsemi / Fairchild

Continuous Collector Current Ic Max

80 A

RoHS

Details

Collector- Emitter Voltage VCEO Max

650 V

Manufacturer Part Number

Y118917K6160TR1R

Voltage Rating AC

-

系列

FGA40T65SHD

包装

Tube

操作温度

-55°C ~ 125°C

尺寸/尺寸

0.300 L x 0.105 W (7.62mm x 2.67mm)

湿度敏感性等级(MSL)

1 (Unlimited)

子类别

IGBTs

技术

Si

ESR（等效串联电阻）

±0.01%

配置

Single

极化

Radial

带宽

17.616k

产品类别

IGBT晶体管

涂层/外壳类型

金属箔

电压 - 击穿（最小值）

-

电压-工作

0.6W

特征

Moisture Resistant, Non-Inductive

产品类别

IGBT晶体管

座位高度(最大)

0.336 (8.53mm)

厚度（最大）

±2ppm/°C

RoHS状态

Tape & Reel (TR)