Vishay Precision Group MAX41K350B

包装/外壳

Radial

供应商器件包装

径向引线

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

4 ns, 5 ns

Vgs th - Gate-Source Threshold Voltage

2.8 V

Pd - Power Dissipation

182 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, + 23 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Microchip

Brand

Microchip Technology / Atmel

Qg - Gate Charge

64 nC

Rds On - Drain-Source Resistance

80 mOhms

Typical Turn-Off Delay Time

21 ns, 24 ns

Id - Continuous Drain Current

35 A

包装

Tube

操作温度

-65°C ~ 175°C

系列

MA

尺寸/尺寸

0.311 L x 0.110 W (7.90mm x 2.80mm)

容差

±0.1%

终止次数

2

温度系数

±5ppm/°C

电阻

41.35 kOhms

组成

金属箔

功率(瓦特)

0.3W

子类别

MOSFETs

技术

Si

失败率

-

配置

Single

通道数量

1 Channel

上升时间

4 ns

产品类别

MOSFET

特征

-

产品类别

MOSFET

座位高度(最大)

0.335 (8.50mm)